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3-level IGBT driver Core,Suitable for all IGBTs up to 600V/1200V/1700V, PSHI 0432

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application Wind power generation、Inverter、Converter、Welding machine &cutting、Induction heating、Trac [1]
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BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

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3-level IGBT driver Core,Suitable for all IGBTs up to 600V/1200V/1700V, PSHI 0432

Place of Origin : China

Brand Name : power-sem

Model Number : PSHI 0432

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1.feature

●ASIC 3-level IGBT driver
●Suitable for all IGBTs up to 600V/1200V/1700V
●Used to drive the upper/lower bridge arm dual IGBT
●Integrated control signal timing management
●Short circuit and over current protection by VCEsat monitoring
● Active-clamping+dynamic spike restrian
●Isolation due to nanometer amorphous transformer
●Supply undervoltage protection (<12.5V)
●Gate voltage monitoring
●Timing time adjustable externally
●Internal isolated DC/DC power supply
●±15A peak current output
●IGBT gate drive voltage+15V/-9V
●350ns signal conversion time
●110ns error signal feedback time
●100ns narrow pulse inhibit eliminate radio frequency interference
●Max. working frequency 100kHz
●Error chain function, low level active
●Clearance distance from primary side to secondary side is 39mm

2.parameter

PSHI 0432

Absolute Maximum Ratings(Ta=25℃)

Symbol	Term	Values	Unit
V_{S MAX.}	Max. supply voltage primary	+16	V
I_{S MAX.}	Max. supply current primary	330	mA
P_DC/DC	Total power of DC/DC isolation power output	4	W
V_in	Max. PWM input level(V_inI; V_inO)	V_S+0.7	V
V_iH	Max. logic signal input voltage (External error signal)	V_S+0.7	V
I_OC	Max. logic signal output currect (Open-collector output current)	10	mA
I_outAV	Output average current per channel	80	mA
I_outPEAK	Output peak current per channel	±15	A
V_CES	IGBT collector-emitter voltage PSHI 0432 PSHI 0432 Pro	-- 1200 1700	V
V_{isol IO}	Isolation voltage IN-OUT(1 minute. AC) PSHI 0432 PSHI 0432 Pro	-- 5000 8000	V
V_{isol AB}	Isolation voltage OUT A-OUT B(1 minute. AC) PSHI 0432 PSHI 0432 Pro	-- 4000 5000	V
R_{Gon/off min}	Minimal R_gon/R_goff	1.6	Ω
Q_out/pulse	Charge per pulse	±10	μC
dv/dt	Rate of rise and fall of voltage	75	kV/μs
f_{SW max}	Max. working frequency	100	kHz
T_op	Operating temperature	-40...+85	℃
T_stg.	Storage temperatature	-45...+85	℃

Electrical Characteristics(Ta=25℃)

Symbol	Term	Parameter				Unit
Symbol	Term	Min.	Typ.	Max.	Rec.	Unit
V_S	Supply voltage primary	14.5	15	15.5	15	V
I_S	No-load currect primary f_SW= 0kHz f_SW=20kHz f_SW=50kHz		-- 80 100 120			mA
V_IT+	Input high level: 15V level	12				V
V_IT－	Input low level: 15V level			4.5		V
R_in	Input resistance		33			kΩ
V_G(on)	Turn-on gate voltage		+15			V
V_G(off)	Turn-off gate voltage		-9			V
t_d(on)IO	IN-OUT turn-on delay time		350			ns
t_d(off)IO	IN-OUT turn-off delay time		350			ns
t_d(err)	Error signal return delay time V_CEerror happen-error signal output		110			ns
t_md	Narrow pulse restrained		100			ns
V_CEstat	Reference voltage for V_CEmonitoring V_CE=1700V V_CE=1200V	2 -- --		6.8 -- --	-- 6.2 5.3	V
V_Level	Logic level (External error input; reset signal; mode select)		+8		+15	V
t_pReset	V_ininput both Low reset time		20			μs
C_PS	Primary to secondary capacitance		8			pf

3.Application

●Diode-clamped 3-level topology
●Dual PWM control 3-level topology
●SVG
●Inverter
●photovoltaic inverter
●High power UPS
●High power high frequency SMPS

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3-level IGBT driver Core,Suitable for all IGBTs up to 600V/1200V/1700V, PSHI 0432 Images

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3-level IGBT driver Core,Suitable for all IGBTs up to 600V/1200V/1700V, PSHI 0432

3-level IGBT driver Core,Suitable for all IGBTs up to 600V/1200V/1700V, PSHI 0432

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3-level IGBT driver Core,Suitable for all IGBTs up to 600V/1200V/1700V, PSHI 0432 Images